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Effect of substrate miscut on the electron mobility in InSb（001） structures on Ge and Ge-on-insulato
InSb epilayers 和 InSb/Al0.20In0.80Sb 量井被分子的横梁取向附生在 Ge (001 ) 底层和 Ge-on-insulator (GeOI )-on-Si(001) 底......
